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| 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 SS3802 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features * * Silicon NPN, To-39 packaged VHF/UHF Transistor Specified 400 MHz, 28Vdc Characteristics - Output Power = 1.0 Watt - Minimum Gain = 10 dB - Efficiency = 45% 800 MHz Current-Gain Bandwidth Product * 1. Emitter 2. Base 3. Collector TO-39 DESCRIPTION: Silicon NPN transistor, designed for VHF and UHF equipment. Applications include amplifier; pre-driver, driver, and output stages. Also suitable for oscillator and frequency-multiplier functions. ABSOLUTE MAXIMUM RATINGS (Tcase = 25C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Collector-Base Voltage Emitter-Base Voltage Collector Current Value 30 55 3.5 400 Unit Vdc Vdc Vdc mA Thermal Data P D Total Device Dissipation Derate above 25C 5.0 28.6 Watts mW/ C MSC1327.PDF 10-25-99 SS3802 ELECTRICAL SPECIFICATIONS (Tcase = 25C) STATIC (off) Symbol BVCER BVCEO BVCBO BVEBO ICEO ICEX Test Conditions Min. Collector-Emitter Breakdown Voltage (IC = 5.0 mAdc, RBE = 10 ohms) Collector-Emitter Sustaining Voltage (IC=5.0 mAdc, IB=0) Collector-Base Breakdown Voltage (IE = 0, IC = 0.1 mAdc) Emitter-Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) Collector Cutoff Current (VCE = 28 Vdc, IB = 0) Collector Cutoff Current (VCE = 55 Vdc, VBE = 1.5 Vdc) 55 30 55 3.5 Value Typ. Max. 20 100 Unit Vdc Vdc Vdc Vdc A A (on) HFE DC Current Gain (IC = 360 mAdc, VCE = 5.0 Vdc) Both (IC = 50 mAdc, VCE = 5.0 Vdc) 2N3866 (IC = 50 mAdc, VCE = 5.0 Vdc) 2N3866A Collector-Emitter Saturation Voltage (IC = 100 mAdc, IB = 20 mAdc) 5.0 10 25 200 200 - VCE(sat) - - 1.0 Vdc DYNAMIC Symbol fT Test Conditions Min. Current-Gain - Bandwidth Product (IC = 50 mAdc, VCE = 15 Vdc, f = 200 MHz) Output Capacitance (VCB = 30 Vdc, IE = 0, f = 1.0 MHz) 2N3866 2N3866A 500 800 Value Typ. 800 2.8 Max. 3.5 Unit MHz COB pF MSC1327.PDF 10-25-99 SS3802 FUNCTIONAL Symbol GPE Power Gain Test Conditions Min. Test Circuit-Figure 1 Pin = 0.1 W, VCE = 28Vdc f = 400 MHz, TC = 25 C Test Circuit-Figure 1 Pin = 0.1 W, VCE = 28Vdc f = 400 MHz, TC = 25 C Test Circuit-Figure 1 Pin = 0.1 W, VCE = 28Vdc f = 400 MHz, TC = 25 C 10 Value Typ. Max. Unit dB Pout Output Power 1.0 - - Watts Collector Efficiency C 45 - - % 8-60 LS POUT (RL=50 OHMS) PIN (R S=50 OHMS) L1 8-60 RFC RFC 0.9-7 3-35 12 RFC 5.6 OHMS 1000 VCE = -28V Figure 1 - 400 MHz RF AMPLIFIER CIRCUIT FOR GPE, POUT, AND EFFICIENCY SPECIFICATIONS. L1: 2 TURNS No. 18 wire, 1/4" ID, 1/8" long Capacitor values in pF unless otherwise indicated. . Ls: 2 3/4 TURNS No. 18 wire, 1/4" ID, 3/16" long Tuning capacitors are air variable MSC1327.PDF 10-25-99 SS3802 MSC1327.PDF 10-25-99 |
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